Cart (0)
  • No items in cart.
Total
$0
There is a technical issue about last added item. You can click "Report to us" button to let us know and we resolve the issue and return back to you or you can continue without last item via click to continue button.
Home
Content
Tour
eLibrary
Store
Search book title
Filters:
FORMAT
BOOKS
All Books
PACKAGES
All Packages
EDITION
to
PUBLISHER
AABC
(1)
AAMI
(337)
ACI
(589)
AISC
(54)
ASA
(234)
ASCE
(996)
ASHRAE
(657)
ASME
(2161)
ASSE
(117)
ASTM
(94624)
AWC
(54)
AWWA
(568)
BHMA
(124)
BICSI
(33)
BIFMA
(21)
BOMA
(20)
BSI
(94534)
CHD
(3)
CRSI
(17)
IAHSS
(1)
IAPMO
(374)
ICC
(315)
IEEE
(6731)
IES
(241)
ISEA
(16)
Joint Commission
(184)
Joint Commission Int.
(1)
NETA
(6)
NFPA
(1646)
TCNA
(17)
TMS
(19)
USGBC
(28)
WILEY
(4)
 
AR
(6)
AZ
(7)
CA
(115)
CT
(3)
FL
(57)
ID
(5)
IL
(5)
IN
(1)
KY
(1)
LA
(2)
MI
(25)
MN
(27)
NC
(27)
NJ
(13)
NY
(61)
OH
(24)
OR
(22)
PA
(7)
RI
(8)
SC
(20)
SD
(1)
TX
(3)
VA
(50)
VT
(6)
WA
(31)
CONTENT TYPE
 Act
 Admin Code
 Announcements
 Bill
 Book
 CADD File
 CAN
 CEU
 Charter
 Checklist
 City Code
 Code
 Commentary
 Comprehensive Plan
 Conference Paper
 County Code
 Course
 DHS Documents
 Document
 Errata
 Executive Regulation
 Federal Guideline
 Firm Content
 Guideline
 Handbook
 Interpretation
 Journal
 Land Use and Development
 Law
 Legislative Rule
 Local Amendment
 Local Code
 Local Document
 Local Regulation
 Local Standards
 Manual
 Model Code
 Model Standard
 Notice
 Ordinance
 Other
 Paperback
 PASS
 Periodicals
 PIN
 Plan
 Policy
 Product
 Product - Data Sheet
 Program
 Provisions
 Requirements
 Revisions
 Rules & Regulations
 Standards
 State Amendment
 State Code
 State Manual
 State Plan
 State Standards
 Statute
 Study Guide
 Supplement
 Sustainability
 Technical Bulletin
 All
  • BSI
    BS IEC 62880-1:2017 Semiconductor devices. Stress migration test standard - Copper stress migration test standard
    Edition: 2020
    $435.35
    / user per year

Description of BS IEC 62880-1:2017 2020

This part of IEC 62880 describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Dual damascene Cu metallization systems usually have liners, such as tantalum (Ta) or tantalum nitride (TaN) on the bottom and sides of trenches etched into dielectric layers. Hence, for structures in which a single via contacts a wide line below it, a void under the via can cause an open circuit at almost the same time as any percentage resistance shift that would satisfy a failure criterion.



Standard NumberBS IEC 62880-1:2017
TitleSemiconductor devices. Stress migration test standard - Copper stress migration test standard
StatusDefinitive
Publication Date2020-07-21
Identical National Standard OfIEC 62880-1:2017
DescriptorsElectromechanical devices, Electronic equipment and components, Integrated circuits, Vocabulary, Terminology, Semiconductor devices, Semiconductor technology
ICS31.080.01 Semiconductor devices in general
CommitteeEPL/47
ISBN978 0 580 85808 6
PublisherBSI
Pages28

About BSI

BSI Group, also known as the British Standards Institution is the national standards body of the United Kingdom. BSI produces technical standards on a wide range of products and services and also supplies certification and standards-related services to businesses.
GROUPS
X