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  • BSI
    BS EN 60749-6:2017 Semiconductor devices. Mechanical and climatic test methods - Storage at high temperature
    Edition: 2017
    $281.30
    / user per year

Description of BS EN 60749-6:2017 2017

The purpose of this part of IEC 60749 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated.

Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.



Standard NumberBS EN 60749-6:2017
TitleSemiconductor devices. Mechanical and climatic test methods - Storage at high temperature
StatusDefinitive
Publication Date2017-11-24
ReplacesBS EN 60749-6:2002
Identical National Standard OfEN 60749-6:2017, IEC 60749-6:2017
DescriptorsHigh temperatures, Electronic storage, Semiconductor devices, Semiconductor storage, Climate, Integrated circuits, Environmental testing, Electronic equipment and components, Mechanical testing
ICS31.080.01 Semiconductor devices in general
CommitteeEPL/47
ISBN978 0 580 94892 3
PublisherBSI
Pages12

About BSI

BSI Group, also known as the British Standards Institution is the national standards body of the United Kingdom. BSI produces technical standards on a wide range of products and services and also supplies certification and standards-related services to businesses.
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