ASTM F1262M-95
Historical Standard: ASTM F1262M-95 Standard Guide for Transient Radiation Upset Threshold of Digital Integrated Circuits
SUPERSEDED (see Active link, below)
ASTM F1262M
1. Scope
1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 10 3 Gy (Si)/s.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
ASTM Standards
E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
F867M Guide or Ionizing Radiation Effects (Total Dose) Testing of Semiconductor Devices [Metric] (Withdrawn 1998)
Military Standards:
Method 1021 in MIL- Dose Rate Threshold for Upset of Digital Microcircuits.Keywords
digital integrated circuits; digital IC's; functional errors; ionizing; pulsed radiation; radiation; transient radiation; upset threshold; Combinational logic; Destructive testing--semiconductors; Digital integrated circuits; Electrical conductors (semiconductors); Failure end point--electronic components/devices; 0Functional errors; Integrated circuits; Ionizing radiation; Irradiance/irradiation--semiconductors; 0Microelectronic devices; MSI integrated circuits; Output transient voltage; Pulsed radiation; Radiation 0exposure--electronic components/devices; Response factors; SSI integrated circuits; Threshold 0detectors; Topological analysis; Transient radiation upset threshold testing; Upset threshold; Voltage; 0Combinational logic; Destructive testing--semiconductors; Digital integrated circuits; Electrical 0conductors (semiconductors); Failure end point--electronic components/devices; Functional errors; 0Integrated circuits; Ionizing radiation; Irradiance/irradiation--semiconductors; Microelectronic devices; 0MSI integrated circuits; Output transient voltage; Pulsed radiation; Radiation exposure--electronic 0components/devices; Response factors; SSI integrated circuits; Threshold detectors; Topological 0analysis; Transient radiation upset threshold testing; Upset threshold; Voltage; ICS Number Code 031.200
DOI: 10.1520/F1262M-95
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