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eLibrary > BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment >

BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment, 2016

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BS EN 62396-1:2016 Process management for avionics. Atmospheric radiation effects - Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment, 2016

30324425-VOR.pdf [Go to Page]
CONTENTS
FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions
4 Abbreviations and acronyms
5 Radiation environment of the atmosphere [Go to Page]
5.1 Radiation generation
5.2 Effect of secondary particles on avionics
5.3 Atmospheric neutrons [Go to Page]
5.3.1 General
5.3.2 Atmospheric neutrons energy spectrum and SEE cross-sections
5.3.3 Altitude variation of atmospheric neutrons
5.3.4 Latitude variation of atmospheric neutrons
5.3.5 Thermal neutrons within aircraft
5.4 Secondary protons
5.5 Other particles
5.6 Solar enhancements
5.7 High altitudes greater than 60 000 ft (18 290 m)
6 Effects of atmospheric radiation on avionics [Go to Page]
6.1 Types of radiation effects
6.2 Single event effects (SEEs) [Go to Page]
6.2.1 General
6.2.2 Single event upset (SEU)
6.2.3 Multiple bit upset (MBU) and multiple cell upset (MCU)
6.2.4 Single effect transients (SETs)
6.2.5 Single event latch-up (SEL)
6.2.6 Single event functional interrupt (SEFI)
6.2.7 Single event burnout (SEB)
6.2.8 Single event gate rupture (SEGR)
6.2.9 Single event induced hard error (SHE)
6.2.10 SEE potential risks based on future technology
6.3 Total ionising dose (TID)
6.4 Displacement damage
7 Guidance for system designs [Go to Page]
7.1 Overview
7.2 System design
7.3 Hardware considerations
7.4 Electronic devices characterisation and control [Go to Page]
7.4.1 Rigour and discipline
7.4.2 Level A systems
7.4.3 Level B
7.4.4 Level C
7.4.5 Levels D and E
8 Determination of avionics single event effects rates [Go to Page]
8.1 Main single event effects
8.2 Single event effects with lower event rates [Go to Page]
8.2.1 Single event burnout (SEB) and single event gate rupture (SEGR)
8.2.2 Single event transient (SET)
8.2.3 Single event hard error (SHE)
8.2.4 Single event latch-up (SEL)
8.3 Single event effects with higher event rates – Single event upset data [Go to Page]
8.3.1 General
8.3.2 SEU cross-section
8.3.3 Proton and neutron beams for measuring SEU cross-sections
8.3.4 SEU per bit cross-section trends in SRAMs
8.3.5 SEU per bit cross-section trends and other SEE in DRAMs
8.4 Calculating SEE rates in avionics
8.5 Calculation of availability of full redundancy [Go to Page]
8.5.1 General
8.5.2 SEU with mitigation and SET
8.5.3 Firm errors and faults
9 Considerations for SEE compliance [Go to Page]
9.1 Compliance
9.2 Confirm the radiation environment for the avionics application
9.3 Identify the system development assurance level
9.4 Assess preliminary electronic equipment design for SEE [Go to Page]
9.4.1 Identify SEE-sensitive electronic components
9.4.2 Quantify SEE rates
9.5 Verify that the system development assurance level requirements are met for SEE [Go to Page]
9.5.1 Combine SEE rates for the entire system
9.5.2 Management of electronic components control and dependability
9.6 Corrective actions
Annexes [Go to Page]
Annex A (informative) Thermal neutron assessment
Annex B (informative) Methods for calculating SEE rates in avionics electronics [Go to Page]
B.1 Proposed in-the-loop system test – Irradiating avionics LRU in neutron/proton beam, with output fed into aircraft simulation computer
B.2 Irradiating avionics LRU in a neutron/proton beam
B.3 Utilising existing SEE data for specific electronic components on LRU [Go to Page]
B.3.1 Neutron proton data
B.3.2 Heavy ion data
B.4 Applying generic SEE data to all electronic components on LRU
B.5 Component level laser simulation of single event effects
B.6 Determination of SEU rate from service monitoring
Annex C (informative) Review of test facility availability [Go to Page]
C.1.1 Neutron facilities
C.1.2 Proton facilities
C.1.3 Laser facilities
C.2 Facilities in Europe [Go to Page]
C.2.1 Neutron facilities
C.2.2 Proton facilities
C.2.3 Laser facilities
Annex D (informative) Tabular description of variation of atmospheric neutron flux with altitude and latitude
Annex E (informative) Consideration of effects at higher altitudes
Annex F (informative) Prediction of SEE rates for ions
Annex G (informative) Late news as of 2014 on SEE cross-sections applicable to the atmospheric neutron environment [Go to Page]
G.1 SEE cross-sections key to SEE rate calculations
G.2 Limitations in compiling SEE cross-section data
G.3 Cross-section measurements (figures with data from public literature)
G.4 Conservative estimates of SEE cross-section data [Go to Page]
G.4.1 General
G.4.2 Single event upset (SEU)
G.4.3 Multiple cell upset (MCU)
G.4.4 Single event functional interrupt (SEFI)
G.4.5 Single event latch-up (SEL)
G.4.6 Single event transient (SET)
G.4.7 Single event burnout (SEB)
Annex H (informative) Calculating SEE rates from non-white (non-atmospheric like) neutron cross-sections for small geometry electronic components [Go to Page]
H.1 Energy thresholds
H.2 Nominal neutron fluxes
H.3 Calculating event rates using non-atmospheric like cross-sections for small geometry electronic devices
Bibliography
Figures [Go to Page]
Figure 1 – Energy spectrum of atmospheric neutrons at 40 000 ft (12 160 m), latitude 45°
Figure 2 – Model of the atmospheric neutron flux variation with altitude (see Annex D)
Figure 3 – Distribution of vertical rigidity cut-offs around the world
Figure 4 – Model of atmospheric neutron flux variation with latitude
Figure 5 – Energy spectrum of protons within the atmosphere
Figure 6 – System safety assessment process
Figure 7 – SEE in relation to system and LRU effect
Figure 8 – Variation of RAM SEU cross-section as function of neutron/proton energy
Figure 9 – Neutron and proton SEU bit cross-section data
Figure 10 – SEU cross-section in SRAMs as function of the manufacture date
Figure 11 – SEU cross-section in DRAMs as function of manufacture date
Figure E.2 – Integral linear energy transfer spectra in siliconat 75 000 ft (22 860 m) for cut-off rigidities (R) from 0 to 17 GV
Figure E.3 – Integral linear energy transfer spectra in siliconat 55 000 ft (16 760 m) for cut-off rigidities (R) from 0 GV to 17 GV
Figure E.4 – Influence of solar modulation on integral linear energytransfer spectra in silicon at 150 000 ft (45 720 m)for cut-off rigidities (R) of 0 GV and 8 GV
Figure E.5 – Influence of solar modulation on integral linear energy transferspectra in silicon at 55 000 ft (16 760 m) for cut-off rigidities (R) of 0 GV and 8 GV
Figure E.6 – Calculated contributions from neutrons, protons and heavy ionsto the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 0 GV
Figure E.7 – Calculated contributions from neutrons, protons and heavy ionsto the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 8 GV
Figure F.1 – Example differential LET spectrum
Figure F.2 – Example integral chord length distributionfor isotropic particle environment
Figure G.1 – Variation of the high energy neutron SEU cross-section per bit as a function of electronic device feature size for SRAMs and SRAM arrays in microprocessors and FPGAs
Figure G.2 – Variation of the high energy neutron SEU cross-section per bit as a function of electronic device feature size for DRAMs
Figure G.3 – Variation of the high energy neutron SEU cross-section per electronic device as a function of electronic device feature size for NOR and NAND type flash memories
Figure G.4 – Variation of the MCU/SBU percentage as a function of feature size based on data from many researchers in SRAMs [43, 45]
Figure G.5 – Variation of the high energy neutron SEFI cross-section in DRAMs as a function of electronic device feature size
Figure G.6 – Variation of the high energy neutron SEFI cross-sectionin microprocessors and FPGAs as a function of electronic device feature size
Figure G.7 – Variation of the high energy neutron single event latch-up (SEL) cross-section in CMOS devices (SRAMs, processors) as a function of electronic device feature size
Figure G.8 – Single event burnout (SEB) cross-section in power electronic devices (400 V to 1 200 V) as a function of drain-source voltage (VDS)
Tables [Go to Page]
Table 1 – Nomenclature cross reference
Table B.1 – Sources of high energy proton or neutron SEU cross-section data
Table B.2 – Some models for the use of heavy ion SEE data to calculate proton SEE data
Table D.1 – Variation of 1 MeV to 10 MeV neutron flux in the atmosphere with altitude
Table D.2 – Variation of 1 MeV to 10 MeV neutron flux in the atmosphere with latitude
Figure E.1 – Integral linear energy transfer spectra in siliconat 100 000 ft (30 480 m) for cut-off rigidities (R) from 0 GV to 17 GV
Table G.1 – Information relevant to neutron-induced SET
Table H.1 – Approximate SEU energy thresholds for SRAM-based devices
Table H.2 – Neutron fluxes above different energy thresholds (40 000 ft, latitude 45°) [Go to Page]

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